Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
In spatially confined system such as heterojunction of high and low band gap material, carriers are transferred from higher band gap to the lower band gap. It causes the band bending and the formation of a triangular quantum well at the junction. Such system behaves as quantum-two dimension (Q2D) s...
Uloženo v:
| Hlavní autoři: | , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Department of Physics, Mahendra Morang Adarsh Multiple Campus, Tribhuvan University
2018-11-01
|
| Edice: | Bibechana |
| Témata: | |
| On-line přístup: | https://www.nepjol.info/index.php/BIBECHANA/article/view/21072 |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|