The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear. This hinders the development of device fabrication tech...

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Autors principals:	Ying Ma, Lin Shi, Liang Chen, Cai Chen, Yifang Hong, Hua Qin, Xiaodong Zhang, Yi Cui, Hongzhen Lin, Zhiqun Cheng, Fan Zhang, Linfeng Mao, Yong Cai
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2024-07-01
Col·lecció:	Nanomaterials
Matèries:	AlGaN/GaN heterojunction Dynamic doping 2DEG
Accés en línia:	https://www.mdpi.com/2079-4991/14/14/1211
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