Uncertainty Propagation in GaN HEMT Small-Signal Models for Millimeter-Wave Circuit Design Applications
This paper investigates the impact of S-parameter measurement uncertainties on broadband modeling and circuit design using gallium nitride (GaN) high electron mobility transistors (HEMTs) from 0.5–110 GHz. A process for creating a small-signal model (SSM) for the GaN device is described, as w...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
IEEE
2026-01-01
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| Σειρά: | IEEE Journal of Microwaves |
| Θέματα: | |
| Διαθέσιμο Online: | https://ieeexplore.ieee.org/document/11417816/ |
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