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Epitaxial Growth Control of Crystalline Morphology and Electronic Transport in InSb Nanowires: Competition Between Axial and Radial Growth Modes

This study investigates the morphological evolution of epitaxial indium antimonide (InSb) nanowires (NWs) grown via chemical vapor deposition (CVD). We systematically explored the influence of key growth parameters—temperature (300 °C to 480 °C), source material composition, gold (Au) nanoparticle c...

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Principais autores: Jiebin Zhong, Jian Lin, Miroslav Penchev, Mihrimah Ozkan, Cengiz S. Ozkan
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2025-09-01
Serier:Nanomaterials
Fag:
InSb nanowires
epitaxy
III-V semiconductors
chemical vapor deposition
HRTEM
FET
Online adgang:https://www.mdpi.com/2079-4991/15/18/1436
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