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Epitaxial Growth Control of Crystalline Morphology and Electronic Transport in InSb Nanowires: Competition Between Axial and Radial Growth Modes

This study investigates the morphological evolution of epitaxial indium antimonide (InSb) nanowires (NWs) grown via chemical vapor deposition (CVD). We systematically explored the influence of key growth parameters—temperature (300 °C to 480 °C), source material composition, gold (Au) nanoparticle c...

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I tiakina i:
Ngā taipitopito rārangi puna kōrero
Ngā kaituhi matua: Jiebin Zhong, Jian Lin, Miroslav Penchev, Mihrimah Ozkan, Cengiz S. Ozkan
Hōputu: Artigo
Reo:Inglês
I whakaputaina: MDPI AG 2025-09-01
Rangatū:Nanomaterials
Ngā marau:
Urunga tuihono:https://www.mdpi.com/2079-4991/15/18/1436
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