Evolution and Analysis of GaN GAA FET Induced High-K Spacer Wrapped Gate Underlap for Superfast Circuitry and RF Applications

Gallium Nitride (GaN) Gate-All-Around (GAA) FETs are developed to be promising candidates for high-frequency, superfast circuitry and RF applications mainly due to their superior electron mobility and wide bandgap. A variety of GaN GAA FETs are developed incorporating gate underlap, spacer technolog...

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Autors principals:	Sneha Singh, Priya Devi, Rudra Sankar Dhar, Mousa I. Hussein, Falah Awwad
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2025-01-01
Col·lecció:	IEEE Access
Matèries:	GaN GAA FET high-k underlap dc and ac performance nano-scaled transistor superfast circuitry
Accés en línia:	https://ieeexplore.ieee.org/document/11159214/
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