Investigation of Inner Spacer-Less Nanosheet FETs From an Off-State Current Perspective
Recently, silicon nanosheet (NS) field-effect transistors (FETs) with a gate-all-around (GAA) structure have been introduced into the semiconductor industry for 3-nm-node logic technology. Compared to the planar or tri-gate structures, the GAA structure provides strong gate controllability, which su...
Salvato in:
| Autori principali: | , , , , , , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IEEE
2025-01-01
|
| Serie: | IEEE Access |
| Soggetti: | |
| Accesso online: | https://ieeexplore.ieee.org/document/11259063/ |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|