Investigation of Inner Spacer-Less Nanosheet FETs From an Off-State Current Perspective
Recently, silicon nanosheet (NS) field-effect transistors (FETs) with a gate-all-around (GAA) structure have been introduced into the semiconductor industry for 3-nm-node logic technology. Compared to the planar or tri-gate structures, the GAA structure provides strong gate controllability, which su...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2025-01-01
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| Col·lecció: | IEEE Access |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/11259063/ |
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