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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

Among the phase change materials, Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST-225) is the most studied and is already integrated into many devices. N doping is known to significantly improve some key characteristics such as the thermal stability of materials and the resistance drift of devices....

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Principais autores: Minh Anh Luong, Nikolay Cherkashin, Béatrice Pecassou, Chiara Sabbione, Frédéric Mazen, Alain Claverie
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2021-06-01
Serier:Nanomaterials
Fag:
phase change materials
Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
nitrogen
crystallization
strain
kinetics
Online adgang:https://www.mdpi.com/2079-4991/11/7/1729
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