Catalytic mechanism towards CVD-grown wafer-size graphene on 4H-SiC (0001) and (0001¯) using dimer carbon sources

In order to understand the process of direct graphene growth on the silicon carbide surface, this study employed density functional theory to analyze its growth mechanism and verifies it experimentally, and draws the following conclusions: (1) Acetylene and ethylene exhibit strong adsorption on both...

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Detaylı Bibliyografya
Asıl Yazarlar:	Zhiyu Jing, Wenhu Wang, Jianjian Shi, Chaojie Yu, Xiucai Sun, Wanjian Yin, Yuqing Song, Xiaoli Sun, Zhongfan Liu
Materyal Türü:	Artigo
Dil:	Inglês
Baskı/Yayın Bilgisi:	Tsinghua University Press 2025-08-01
Seri Bilgileri:	Nano Research
Konular:	graphene silicon carbide chemical vapor deposition (cvd) catalytic direct growth
Online Erişim:	https://www.sciopen.com/article/10.26599/NR.2025.94907515
Etiketler:	Etiketle Etiket eklenmemiş, İlk siz ekleyin!

Catalytic mechanism towards CVD-grown wafer-size graphene on 4H-SiC (0001) and (0001¯) using dimer carbon sources

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