Catalytic mechanism towards CVD-grown wafer-size graphene on 4H-SiC (0001) and (0001¯) using dimer carbon sources

In order to understand the process of direct graphene growth on the silicon carbide surface, this study employed density functional theory to analyze its growth mechanism and verifies it experimentally, and draws the following conclusions: (1) Acetylene and ethylene exhibit strong adsorption on both...

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Główni autorzy:	Zhiyu Jing, Wenhu Wang, Jianjian Shi, Chaojie Yu, Xiucai Sun, Wanjian Yin, Yuqing Song, Xiaoli Sun, Zhongfan Liu
Format:	Artigo
Język:	Inglês
Wydane:	Tsinghua University Press 2025-08-01
Seria:	Nano Research
Hasła przedmiotowe:	graphene silicon carbide chemical vapor deposition (cvd) catalytic direct growth
Dostęp online:	https://www.sciopen.com/article/10.26599/NR.2025.94907515
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