Catalytic mechanism towards CVD-grown wafer-size graphene on 4H-SiC (0001) and (0001¯) using dimer carbon sources

In order to understand the process of direct graphene growth on the silicon carbide surface, this study employed density functional theory to analyze its growth mechanism and verifies it experimentally, and draws the following conclusions: (1) Acetylene and ethylene exhibit strong adsorption on both...

وصف كامل

التفاصيل البيبلوغرافية

المؤلفون الرئيسيون:	Zhiyu Jing, Wenhu Wang, Jianjian Shi, Chaojie Yu, Xiucai Sun, Wanjian Yin, Yuqing Song, Xiaoli Sun, Zhongfan Liu
التنسيق:	Artigo
اللغة:	Inglês
منشور في:	Tsinghua University Press 2025-08-01
سلاسل:	Nano Research
الموضوعات:	graphene silicon carbide chemical vapor deposition (cvd) catalytic direct growth
الوصول للمادة أونلاين:	https://www.sciopen.com/article/10.26599/NR.2025.94907515
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!