Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO2 for advanced silicon radiation detectors
Abstract Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p + and n + layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide pa...
-д хадгалсан:
| Үндсэн зохиолчид: | , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Nature Portfolio
2024-07-01
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| Цуврал: | Scientific Reports |
| Онлайн хандалт: | https://doi.org/10.1038/s41598-024-68368-w |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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