Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO2 for advanced silicon radiation detectors
Abstract Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p + and n + layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide pa...
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Portfolio
2024-07-01
|
| Serie: | Scientific Reports |
| Accesso online: | https://doi.org/10.1038/s41598-024-68368-w |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|