Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO2 for advanced silicon radiation detectors
Abstract Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p + and n + layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide pa...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Portfolio
2024-07-01
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| Edice: | Scientific Reports |
| On-line přístup: | https://doi.org/10.1038/s41598-024-68368-w |
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