Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications
ABSTRACT Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface‐driven transport phenomena due to their high surface‐to‐volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states in InAs nanowire field‐effect transi...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Wiley-VCH
2025-12-01
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| Rangatū: | Advanced Electronic Materials |
| Ngā marau: | |
| Urunga tuihono: | https://doi.org/10.1002/aelm.202500520 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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