Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications

ABSTRACT Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface‐driven transport phenomena due to their high surface‐to‐volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states in InAs nanowire field‐effect transi...

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Hlavní autoři:	Aniello Pelella, Valeria Demontis, Andrea Sessa, Adolfo Mazzotti, Filippo Giubileo, Valentina Zannier, Lucia Sorba, Francesco Rossella, Antonio Di Bartolomeo
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2025-12-01
Edice:	Advanced Electronic Materials
Témata:	gate‐all‐around InAs nanowire neuromorphic photogating effect synaptic plasticity
On-line přístup:	https://doi.org/10.1002/aelm.202500520
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