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The Effect of Cerium Doping on LiTaO3 Thin Film on Band Gap Energy

Lithium tantalite LiTaO3 was grown on a Si Type-P (100) substrate by chemical solution deposition and spin coating methods at a speed of 3000 rpm for 30 seconds with an annealing temperature of 800 ° C, 900 ° C. This study aims to determine the effect of temperature variations on the band gap energy...

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Auteurs principaux: Agus Ismangil, Subiyanto Subiyanto, Sudradjat Sudradjat, Wahyu Gendam Prakoso, Asep Saepulrohman
Format: Artigo
Langue:Inglês
Publié: Universitas Islam Negeri Raden Intan Lampung 2021-12-01
Collection:International Journal of Electronics and Communications System
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Accès en ligne:https://ejournal.radenintan.ac.id/index.php/IJECS/article/view/7906
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