The Effect of Cerium Doping on LiTaO3 Thin Film on Band Gap Energy
Lithium tantalite LiTaO3 was grown on a Si Type-P (100) substrate by chemical solution deposition and spin coating methods at a speed of 3000 rpm for 30 seconds with an annealing temperature of 800 ° C, 900 ° C. This study aims to determine the effect of temperature variations on the band gap energy...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Universitas Islam Negeri Raden Intan Lampung
2021-12-01
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| Edice: | International Journal of Electronics and Communications System |
| Témata: | |
| On-line přístup: | https://ejournal.radenintan.ac.id/index.php/IJECS/article/view/7906 |
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