SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma Radiation
Silicon carbide (SiC) is a key material for electronics operating in harsh environments due to its wide bandgap, high thermal conductivity, and radiation hardness. In this work, we present a SPICE model for a 4H-SiC BJT and TTL inverter exposed to gamma radiation. The devices were fabricated using a...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2025-10-01
|
| Colección: | Micromachines |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2072-666X/16/11/1246 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|