SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma Radiation
Silicon carbide (SiC) is a key material for electronics operating in harsh environments due to its wide bandgap, high thermal conductivity, and radiation hardness. In this work, we present a SPICE model for a 4H-SiC BJT and TTL inverter exposed to gamma radiation. The devices were fabricated using a...
Wedi'i Gadw mewn:
| Prif Awduron: | , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI AG
2025-10-01
|
| Cyfres: | Micromachines |
| Pynciau: | |
| Mynediad Ar-lein: | https://www.mdpi.com/2072-666X/16/11/1246 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|