NEXAFS spectral peculiarities in Sn:SiO2 composite layer
Synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy has been used to investigate a novel Sn:SiO2 composite thin layer grown by organometallic chemical vapor deposition technique (CVD) on a single crystalline silicon wafer with additional treatment by argon ions. Accordi...
में बचाया:
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Elsevier
2025-08-01
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| श्रृंखला: | Results in Physics |
| विषय: | |
| ऑनलाइन पहुंच: | http://www.sciencedirect.com/science/article/pii/S2211379725002335 |
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