Sol–Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks

Yttrium oxide (Y₂O₃) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming process. The effect of c...

Полное описание

Библиографические подробности

Главные авторы:	Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2023-08-01
Серии:	Nanomaterials
Предметы:	sol–gel Y<sub>2</sub>O<sub>3</sub> RRAM multilevel cell
Online-ссылка:	https://www.mdpi.com/2079-4991/13/17/2432
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!