Sol–Gel-Processed Y<sub>2</sub>O<sub>3</sub>–Al<sub>2</sub>O<sub>3</sub> Mixed Oxide-Based Resistive Random-Access-Memory Devices
Herein, sol–gel-processed Y<sub>2</sub>O<sub>3</sub>–Al<sub>2</sub>O<sub>3</sub> mixed oxide-based resistive random-access-memory (RRAM) devices with different proportions of the involved Y<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub> precursors were fabricated on indium tin oxide/glass...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2023-08-01
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| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2079-4991/13/17/2462 |
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