Sol–Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks

Yttrium oxide (Y₂O₃) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming process. The effect of c...

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Bibliografiske detaljer

Principais autores:	Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2023-08-01
Serier:	Nanomaterials
Fag:	sol–gel Y<sub>2</sub>O<sub>3</sub> RRAM multilevel cell
Online adgang:	https://www.mdpi.com/2079-4991/13/17/2432
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