P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation

Zinc oxide (ZnO) is a wide bandgap semiconductor that holds significant potential for various applications. However, most of the native point defects in ZnO like Zn interstitials typically cause an n-type conductivity. Consequently, achieving p-type doping in ZnO is challenging but crucial for compr...

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Hlavní autoři:	Guoxiu Zhang, Lars Rebohle, Fabian Ganss, Wojciech Dawidowski, Elzbieta Guziewicz, Jung-Hyuk Koh, Manfred Helm, Shengqiang Zhou, Yufei Liu, Slawomir Prucnal
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2024-06-01
Edice:	Nanomaterials
Témata:	p-type-doped ZnO atomic layer deposition ion implantation flash lamp annealing rapid thermal annealing
On-line přístup:	https://www.mdpi.com/2079-4991/14/13/1069
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