Defect Characterization of the SiO<sub>2</sub>/Si Interface Investigated by Drift-Assisted Positron Annihilation Lifetime Spectroscopy
This study demonstrates drift-assisted positron annihilation lifetime spectroscopy on a p-type (100) silicon substrate in a MOS capacitor, using an applied electric field to control the spatial positron distribution prior to annihilation. The device was operated under accumulation, depletion, and in...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , , , , , , , , , , , |
|---|---|
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
MDPI AG
2026-01-01
|
| Sraith: | Nanomaterials |
| Ábhair: | |
| Rochtain ar líne: | https://www.mdpi.com/2079-4991/16/3/156 |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
|