Defect Characterization of the SiO₂/Si Interface Investigated by Drift-Assisted Positron Annihilation Lifetime Spectroscopy

This study demonstrates drift-assisted positron annihilation lifetime spectroscopy on a p-type (100) silicon substrate in a MOS capacitor, using an applied electric field to control the spatial positron distribution prior to annihilation. The device was operated under accumulation, depletion, and in...

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Egile Nagusiak:	Ricardo Helm, Werner Egger, Catherine Corbel, Peter Sperr, Maik Butterling, Andreas Wagner, Maciej Oskar Liedke, Eric Hirschmann, Johannes Mitteneder, Michael Mayerhofer, Kangho Lee, Georg S. Duesberg, Günther Dollinger, Marcel Dickmann
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	MDPI AG 2026-01-01
Saila:	Nanomaterials
Gaiak:	ultra thin-films interface defects drift-assisted positron annihilation lifetime spectroscopy oxide–semiconductor interface
Sarrera elektronikoa:	https://www.mdpi.com/2079-4991/16/3/156
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