Optimization of Multi-Fins FinFET Implemented on SOI Wafer Based on SiGe and Gaussian Process Regression

Despite advancements in mitigating the short channel effect using high-k materials, multi-gate structures, and silicon-germanium (SiGe) alloys in three-dimensional FinFETs, performance trade-offs remain. This study introduces a novel machine learning framework utilizing a Gaussian process regression...

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Autores principales:	Christofer N. Yalung, Wittawat Yamwong, Doldet Tantraviwat
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IEEE 2024-01-01
Colección:	IEEE Access
Materias:	Tri-gate FinFET multi-fins FinFET optimization SiGe mole fraction surrogate optimization Gaussian process regression
Acceso en línea:	https://ieeexplore.ieee.org/document/10741230/
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