Optimization of Multi-Fins FinFET Implemented on SOI Wafer Based on SiGe and Gaussian Process Regression
Despite advancements in mitigating the short channel effect using high-k materials, multi-gate structures, and silicon-germanium (SiGe) alloys in three-dimensional FinFETs, performance trade-offs remain. This study introduces a novel machine learning framework utilizing a Gaussian process regression...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IEEE
2024-01-01
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| Schriftenreihe: | IEEE Access |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/10741230/ |
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