AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 a...

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Detalhes bibliográficos

Principais autores:	Xinke Liu, Hong Gu, Kuilong Li, Lunchun Guo, Deliang Zhu, Youming Lu, Jianfeng Wang, Hao-Chung Kuo, Zhihong Liu, Wenjun Liu, Lin Chen, Jianping Fang, Kah-Wee Ang, Ke Xu, Jin-Ping Ao
Formato:	Artigo
Idioma:	Inglês
Publicado em:	AIP Publishing LLC 2017-09-01
coleção:	AIP Advances
Acesso em linha:	http://dx.doi.org/10.1063/1.4999810
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