Switchable‐Memory Operation of Silicon Nanowire Transistor
Abstract The switchable‐memory operation of a feedback silicon nanowire transistor with a dual‐gate structure is demonstrated. The single transistor exhibits volatile memory characteristics with a retention time longer than 3600 s, as well as a switching capability with a subthreshold swing lower th...
Tallennettuna:
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Wiley-VCH
2018-12-01
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| Sarja: | Advanced Electronic Materials |
| Aiheet: | |
| Linkit: | https://doi.org/10.1002/aelm.201800429 |
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