32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underw...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha, Joon Seop Kwak
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2021-11-01
Sarja:	Nanomaterials
Aiheet:	micro light-emitting diodes (μ-LEDs) high electron mobility transistor (HEMT) flip-chip solder bump bonding μ-LED arrays
Linkit:	https://www.mdpi.com/2079-4991/11/11/3045
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