“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn compositi...
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| Principais autores: | , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2023-08-01
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| Serier: | Sensors |
| Fag: | |
| Online adgang: | https://www.mdpi.com/1424-8220/23/17/7386 |
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