Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

Abstract In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p‐channel polycrystalline silicon (poly‐Si) and n‐channel amorphous indium tungsten oxide (a‐IWO), with a low footpri...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Zhen‐Hao Li, Tsung‐Che Chiang, Po‐Yi Kuo, Chun‐Hao Tu, Yue Kuo, Po‐Tsun Liu
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley 2023-03-01
Sarja:	Advanced Science
Aiheet:	atomically‐thin a‐IWO channel complementary field‐effect transistors inverter monolithic 3D‐IC thin film transistors 2D materials‐like
Linkit:	https://doi.org/10.1002/advs.202205481
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