Thin Hydrogenated Amorphous Silicon Carbide Layers with Embedded Ge Nanocrystals
The in situ combination of plasma-enhanced chemical vapor deposition (PECVD) and vacuum evaporation in the same vacuum chamber allowed us to integrate germanium nanocrystals (Ge NCs) into hydrogenated amorphous silicon carbide (a-SiC:H) thin films deposited from monomethyl silane diluted with hydrog...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2025-01-01
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| coleção: | Nanomaterials |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2079-4991/15/3/176 |
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