High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
Abstract GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated s...
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| Główni autorzy: | , , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Wiley-VCH
2025-11-01
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| Seria: | Advanced Electronic Materials |
| Hasła przedmiotowe: | |
| Dostęp online: | https://doi.org/10.1002/aelm.202500460 |
| Etykiety: |
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