High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
Abstract GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated s...
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| Autori principali: | , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Wiley-VCH
2025-11-01
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| Serie: | Advanced Electronic Materials |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1002/aelm.202500460 |
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