Accounting for mechanical stresses in combined dielectrics for VLSI capacitors
A variant of a combined capacitor dielectric based on tantalum pentoxide for VLSI capacitors is proposed. To find the optimal combination of layers in which the Si—SiO₂—Ta₂O₅ system does not undergo elastic mechanical deformation, a stress model was constructed. Calculations showed that when the thi...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Politekhperiodika
2003-02-01
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| Col·lecció: | Технологія та конструювання в електронній апаратурі |
| Matèries: | |
| Accés en línia: | https://tkea.com.ua/index.php/journal/article/view/1302 |
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