Accounting for mechanical stresses in combined dielectrics for VLSI capacitors
A variant of a combined capacitor dielectric based on tantalum pentoxide for VLSI capacitors is proposed. To find the optimal combination of layers in which the Si—SiO₂—Ta₂O₅ system does not undergo elastic mechanical deformation, a stress model was constructed. Calculations showed that when the thi...
Bewaard in:
| Hoofdauteurs: | , , |
|---|---|
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Politekhperiodika
2003-02-01
|
| Reeks: | Технологія та конструювання в електронній апаратурі |
| Onderwerpen: | |
| Online toegang: | https://tkea.com.ua/index.php/journal/article/view/1302 |
| Tags: |
Geen labels, Wees de eerste die dit record labelt!
|