Accounting for mechanical stresses in combined dielectrics for VLSI capacitors
A variant of a combined capacitor dielectric based on tantalum pentoxide for VLSI capacitors is proposed. To find the optimal combination of layers in which the Si—SiO₂—Ta₂O₅ system does not undergo elastic mechanical deformation, a stress model was constructed. Calculations showed that when the thi...
שמור ב:
| Principais autores: | , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Politekhperiodika
2003-02-01
|
| סדרה: | Технологія та конструювання в електронній апаратурі |
| נושאים: | |
| גישה מקוונת: | https://tkea.com.ua/index.php/journal/article/view/1302 |
| תגים: |
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|