A multi-node-upset-resilient 14T SRAM with high read stability for space applications
This paper proposes a voltage-booster read-decoupled radiation-hardened 14T (BDRH14T) SRAM cell. In harsh environments such as space, radiation can flip the stored data in memory cells, resulting in soft errors, including single-event upset (SEU) and single-event multi-node upset (SEMNU). Moreover,...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Elsevier
2026-05-01
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| Serie: | Nuclear Engineering and Technology |
| Soggetti: | |
| Accesso online: | http://www.sciencedirect.com/science/article/pii/S1738573325006795 |
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