A multi-node-upset-resilient 14T SRAM with high read stability for space applications

This paper proposes a voltage-booster read-decoupled radiation-hardened 14T (BDRH14T) SRAM cell. In harsh environments such as space, radiation can flip the stored data in memory cells, resulting in soft errors, including single-event upset (SEU) and single-event multi-node upset (SEMNU). Moreover,...

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Autores principales:	Sung-Jun Lim, Sung-Hun Jo
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Elsevier 2026-05-01
Colección:	Nuclear Engineering and Technology
Materias:	Hold power Radiation-hardened Read static noise margin SRAM Voltage booster
Acceso en línea:	http://www.sciencedirect.com/science/article/pii/S1738573325006795
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