Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Abstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tet...

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Autors principals:	Fu‐Gow Tarntair, Chih‐Yang Huang, Siddharth Rana, Kun‐Lin Lin, Shao‐Hui Hsu, Yu‐Cheng Kao, Singh Jitendra Pratap, Yi‐Che Chen, Niall Tumilty, Po‐Liang Liu, Ray‐Hua Horng
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-01-01
Col·lecció:	Advanced Electronic Materials
Matèries:	density functional theory heteroepitaxial Ga2O3, MOCVD in situ doping TEOS
Accés en línia:	https://doi.org/10.1002/aelm.202300679
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