The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa<sub>2</sub>O<sub>4</sub> Films
Spinel ZnGa<sub>2</sub>O<sub>4</sub> films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crystal quality. The effect of the...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2021-09-01
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| Edice: | Nanomaterials |
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| On-line přístup: | https://www.mdpi.com/2079-4991/11/9/2316 |
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