Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Abstract Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga2O3) ultraviolet photodetectors on the sapphire substrate are investigated. The grain size of poly-Ga2O3 becomes larger with the post annealing temperature (PAT) increasing fr...

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Главные авторы:	Haodong Hu, Yuchen Liu, Genquan Han, Cizhe Fang, Yanfang Zhang, Huan Liu, Yibo Wang, Yan Liu, Jiandong Ye, Yue Hao
Формат:	Artigo
Язык:	Inglês
Опубликовано:	SpringerOpen 2020-05-01
Серии:	Nanoscale Research Letters
Предметы:	Gallium oxide (Ga2O3) Post annealing Solar-blind Ultraviolet Photodetector
Online-ссылка:	http://link.springer.com/article/10.1186/s11671-020-03324-x
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