Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-...

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Bibliografische gegevens

Hoofdauteurs:	Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	MDPI AG 2021-07-01
Reeks:	Nanomaterials
Onderwerpen:	GaP nanowires molecular beam epitaxy two-stage growth
Online toegang:	https://www.mdpi.com/2079-4991/11/8/1949
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