Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2021-07-01
Цуврал:	Nanomaterials
Нөхцлүүд:	GaP nanowires molecular beam epitaxy two-stage growth
Онлайн хандалт:	https://www.mdpi.com/2079-4991/11/8/1949
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!