Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-...

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Bibliographic Details

Main Authors:	Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Format:	Artigo
Language:	Inglês
Published:	MDPI AG 2021-07-01
Series:	Nanomaterials
Subjects:	GaP nanowires molecular beam epitaxy two-stage growth
Online Access:	https://www.mdpi.com/2079-4991/11/8/1949
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