Resistive switching properties in polycrystalline LiNbO3 thin films
LiNbO _3 (LNO) is currently intensively studied as an important ferroelectric material. In this work, polycrystalline LNO films were prepared through a sputtering technique, and their ferroelectricity-related resistive switching property was investigated using a device structure of PtSi/SiO _2 /LNO/...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IOP Publishing
2024-01-01
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| Schriftenreihe: | Applied Physics Express |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.35848/1882-0786/ad3f6d |
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